| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sensor enhanced in measuring sensitivity and the degree of freedom of layout by reducing the restriction of the shape of a channel and the area and position of a reaction field, and a method for manufacturing the same. <P>SOLUTION: Since the sensor 10 is constituted so that the reaction field 20 is formed on a silicon oxide film 12a different from the channel 16, the shape of the channel 16 and the area of the reaction field 20 can be respectively independently selected. As a result, measuring sensitivity and the degree of freedom of layout can be enhanced. Further, since the sensor 10 has the polysilicone-made channel 16, a silicon oxide film 12b, a drain electrode 14, a source electrode 15 and the channel 16 can be easily formed using a semiconductor manufacturing process same to a TFT manufacturing process. <P>COPYRIGHT: (C)2010,JPO&INPIT |
