| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayered type phase change type or resistance change type nonvolatile storage device having an excellent operation characteristic and easy to process; and a manufacturing method thereof. SOLUTION: In this nonvolatile storage device with a plurality of unit memory layers 2A laminated on one another, each of the unit memory layers 2A includes: a first wire 10 extending in the first direction; a second wire 40 extending in the second direction non parallel with the first direction; and a recording part 30 sandwiched between the first wire 10 and second wire 40, and using a phase change layer, a variable resistance layer or the like having a characteristic changed by a voltage between the first wire 10 and the second wire 20; and has, in a boundary between the adjacent unit memory layers 2A, a boundary part 2T having an insulation layer 50 and a pair of wires sandwiching the insulation layer 50 from the vertical direction and selected from the first wires 10 and the second wires 40. The insulation layer 50 included in the boundary part 2T and the two wires selected from the first wires 10 and the second wires 40 are collectively processed. COPYRIGHT: (C)2010,JPO&INPIT |
