METAL POLISHING SOLUTION, CHEMICAL MECHANICAL POLISHING METHOD AND NEW COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide metal polishing solution attaining high polishing speed and low dishing and reducing defects in chemical mechanical polishing of a semiconductor wafer.

SOLUTION: Metal polishing solution contains compound, oxidant and organic acid, which are expressed by a formula (1). In the formula (1), R1, R2, R3, R4, R5and R6independently express hydrogen atoms, aliphatic hydrocarbon radicals, aryl radicals, or heterocyclic radicals. However, all R1, R2, R3, R4, R5and R6do not become the hydrogen atoms.

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