| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor power device having high breakdown voltage, which has low on-resistance. SOLUTION: In a terminal region located on the outside of a cell region, guard ring layers 13 and 14 having a two stage configuration of high concentration and low concentration are formed selectively on the surface layer of an N<SP>-</SP>drift layer. COPYRIGHT: (C)2010,JPO&INPIT |
