| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask, a laser crystallization apparatus, laser crystallization method, crystal material, and a semiconductor device, which are capable of forming a square crystal larger than before. SOLUTION: A slit for a mask element group for seed crystal formation is arranged on a mask so that a seed crystal surrounded by a crystal grain boundary of nearly closed loop may be formed by laser beam irradiation on a mask. Regarding an X-Y rectangular coordinate with an origin at a specific position in the seed crystal, k is set to be a natural number from 1 to 4; in the k-th quadrant, an X-axis positive direction is set to be kX+, an X-axis negative direction kX-, a Y-axis positive direction kY+ and a Y-axis negative direction kY-. After that, a slit for a mask element group for seed crystal expansion, which follows the mask element group for seed crystal formation, is arranged so that the seed crystal surrounded by the crystal grain boundary of nearly closed group may be expanded in the direction of 1X+, 1Y+, 2X-, 2Y+, 3X-, 3Y-, 4X+ and 4Y-, by the control of the irradiation timing of laser beams irradiated through a mask element group for seed crystal expansion following the mask element group for seed crystal formation and also by the control of the relative movement of the mask. COPYRIGHT: (C)2010,JPO&INPIT
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