| 摘要 |
A piezoelectric thin film elemental device has a lower electrode, a piezoelectric thin film, and an upper electrode. The piezoelectric thin film has a thin film of a perovskite structure, expressed by a compositional formula (K1-xNax)NbO3 (0<x<1), and a c/a ratio of an out-of-plane directional lattice constant c to an in-plane directional lattice constant a of the (K1-xNax)NbO3 thin film is set within a range of 0.0980<=c/a<=1.0100.
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