发明名称 ELECTRODE AND METHOD FOR FORMING THE SAME AND SEMICONDUCTOR DEVICE
摘要 An electrode includes a substrate, a contact layer, and a metal layer. The substrate has activated Si on the surface thereof. The contact layer includes a thin film (organic molecular film) made of an organic molecule having a first end with one of a CH group, a CH2 group, and a CH3 group and a second end with one of an amino group, a mercapto group, a phenyl group, and a carboxyl group. The thin film is formed on the surface of the substrate. A catalyst metal is applied to the surface of the organic molecular film. The metal layer is formed on the contact layer by an electroless plating process.
申请公布号 US2009305061(A1) 申请公布日期 2009.12.10
申请号 US20090476672 申请日期 2009.06.02
申请人 SONY CORPORATION 发明人 ISHIHARA HIROTSUGU;TANAKA MASANOBU;KAMEI TAKAHIRO
分类号 B32B15/04;B05D5/12 主分类号 B32B15/04
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