发明名称 |
STRUCTURE, STRUCTURE AND METHOD FOR FABRICATION JFET IN CMOS |
摘要 |
A design structure, and more particularly, to a design structure for manufacturing a JFET in SOI, a JFET and methods of manufacturing the JFET are provided. The JFET includes a gate poly formed directly on an SOI layer and a gate oxide layer interposed between outer edges of the gate poly and the SOI layer.
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申请公布号 |
US2009302355(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20080132638 |
申请日期 |
2008.06.04 |
申请人 |
PEKARIK JOHN J;PHELPS RICHARD A;RASSEL ROBERT M;SHI YUN |
发明人 |
PEKARIK JOHN J.;PHELPS RICHARD A.;RASSEL ROBERT M.;SHI YUN |
分类号 |
H01L29/808;G06F17/50;H01L21/337 |
主分类号 |
H01L29/808 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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