发明名称 |
Formation of CIGS Absorber Layers on Foil Substrates |
摘要 |
An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200° C. and about 600° C. and maintained in the average plateau temperature range 2 to 30 minutes after which the temperature is reduced.
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申请公布号 |
US2009305455(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20090437532 |
申请日期 |
2009.05.07 |
申请人 |
LEIDHOLM CRAIG;BOLLMAN BRENT |
发明人 |
LEIDHOLM CRAIG;BOLLMAN BRENT |
分类号 |
H01L21/06;B05D5/12;C23C14/34 |
主分类号 |
H01L21/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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