发明名称 |
METHOD OF ACCESSING SEMICONDUCTOR CIRCUITS FROM THE BACKSIDE USING ION-BEAM AND GAS-ETCH |
摘要 |
The invention generally relates to semiconductor device processing, and more particularly to methods of accessing semiconductor circuits from the backside using ion-beam and gas-etch to mill deep vias through full-thickness silicon. A method includes creating a pocket in a material to be etched, and performing an isotropic etch of the material by flowing a reactive gas into the pocket and directing a focused ion beam into the pocket. |
申请公布号 |
US2009302431(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20080136336 |
申请日期 |
2008.06.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SCRUDATO CARMELO F.;GU GEORGE Y.;HAHN LOREN L.;HERSCHBEIN STEVEN B. |
分类号 |
H01L29/06;H01L21/3065 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|