| 摘要 |
A method for obtaining quantum-dimensional structures of lead telluride comprises a method of vacuum evaporation. According to the method, initial material is evaporated using previously synthesised composition AIVBVI at temperature Тof sample evaporation, deposited to substrates at temperature of Тduring specified time t. As a substrate, preliminary oxygenized monocrystals of silicon SiО-Si are used. Evaporator temperature is Т= (700±10)°С, substrate temperature is –Т=(50-300)°С, deposition time t=(15÷30) min. |
