发明名称 SEMICONDUCTOR TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor treatment device capable of removing contamination in a semiconductor polluted in an atmosphere until a chamber is transferred to complete desirable treatment when the semiconductor is treated in the chamber. SOLUTION: The semiconductor treatment device has a chamber (load-lock chamber 5) with the semiconductor (substrate 1) being an object to be treated housed therein, and a vacuum-ventilating system 15-1 connected to the chamber. The vacuum-ventilating system includes a ventilating vacuum pump (vacuum pump 14-1) for ventilation the inside of the chamber, and a highly vacuuming pump 14-4 for ventilation the inside of the chamber by the ventilating vacuum pump at a highly vacuuming degree. The contamination attached by bringing the semiconductor into contact with the atmosphere can be removed at a high degree of accuracy without preparing any other treatment chambers. Thereafter, treatment can be carried out without being affected by the contamination in the atmosphere. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009290177(A) 申请公布日期 2009.12.10
申请号 JP20080144422 申请日期 2008.06.02
申请人 JAPAN STEEL WORKS LTD:THE 发明人 MACHIDA MASASHI;TOMOTSUGI HEIJI
分类号 H01L21/268 主分类号 H01L21/268
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