METHOD FOR ENHANCING POSITIVE (CLEAR FIELD) PHASE SHIFT MASK (TRANSPARENT PHASE SHIFT MASK WITH OPAQUE APERTURE) WITH BORDER REGIONS AROUND PHASE 0 REGION AND PHASE 180 REGIONS

摘要

PROBLEM TO BE SOLVED: To generate phase shifting patterns to improve patterning of gates and other layers, structures or regions needing sub-nominal dimensions.

SOLUTION: A technique is disclosed, in which a first boundary region is added to the ends of a phase zero (0) pattern defining polygons and a second boundary region is added to the ends of a phase 180 pattern. This technique can improve the line-end pattern definition and improve the manufacturability and a patterning process window. The added boundary region balances the light on both sides of the line ends, resulting in a more predictable final resist pattern.

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