发明名称 POSITIVE TYPE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive type resist composition for new freezing processing, not conducting special chemical processing to a first resist pattern in the freezing process, and capable of forming the first pattern having favorable line edge roughness without being substantially dissolved in a solvent of a second resist and a liquid developer without deteriorating the shape even when a second resist pattern is formed, and to provide a pattern forming method using the positive type resist composition. <P>SOLUTION: This positive type resist composition contains (A) resin, whose solubility to an alkaline liquid developer is increased by the action of acid, and (B) a compound to which active light rays or radiation is applied to generate acid, wherein the resin (A) includes (a1) a repeating unit having a group which is dissolved by the action of acid to generate an alkali soluble group and (a2) a repeating unit having a functional group which bridges between resins by heating. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009288343(A) 申请公布日期 2009.12.10
申请号 JP20080138613 申请日期 2008.05.27
申请人 FUJIFILM CORP 发明人 HOSHINO WATARU;TSUBAKI HIDEAKI;SUGIMOTO NAOYA;NISHIKAWA NAOYUKI;TARUYA SHINJI
分类号 G03F7/039;C08F220/26;G03F7/004;G03F7/40;H01L21/027 主分类号 G03F7/039
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