FIELD-EFFECT TRANSISTOR WITH SPIN-DEPENDENT TRANSFER CHARACTERISTICS, AND NONVOLATILE MEMORY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) using a ferromagnet-based Schottky junction for the source-drain.

SOLUTION: The transistor includes: a ferromagnetic source that is a ferromagnet consisting of a half metal taking a metal band structure (hereinafter referred to as "metal spin band") for one spin and a semiconductor or insulator band structure (hereinafter referred to as "semiconductor spin band") for the other spin and that injects the spin-polarized conduction carrier; a ferromagnetic drain consisting of a half metal accepting the spin-polarized conduction carrier that is injected from the ferromagnetic source; a semiconductor layer that is provided between the ferromagnetic source and the ferromagnetic drain and is bonded with each of the ferromagnetic source and the ferromagnetic drain; and gate electrodes formed with respect to the semiconductor layer.

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