发明名称 SWITCHING CIRCUIT AND DRIVING CIRCUIT OF TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To minimize delay of rising of gate voltage potential in a switching circuit having circuitry for maintaining the gate voltage potential of a transistor below a threshold potential. <P>SOLUTION: A switching circuit comprises a voltage controlled main transistor, a sub-transistor connected with the ground terminal and having a drain-source voltage at on time which is lower than the gate threshold voltage of the main transistor, a first power line provided with a first resistor and connecting the gate of the main transistor with a terminal which is connected with a power supply, a second power line which allows a current flowing from the gate of the main transistor to the sub-transistor selectively, and a third power line provided with a second resistor and connecting the terminal with the sub-transistor, wherein the resistance of the second resistor is smaller than a value obtained by dividing the product of the capacity of the main transistor and the resistance of the first resistor by the capacity of the sub-transistor. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009290287(A) 申请公布日期 2009.12.10
申请号 JP20080137999 申请日期 2008.05.27
申请人 TOYOTA MOTOR CORP 发明人 YAMAMOTO KAZUNARI
分类号 H03K17/687;H02M1/08;H03K17/04 主分类号 H03K17/687
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