BRAIN SURFACE ELECTRODE, ITS MANUFACTURING METHOD, AND ITS USING METHOD

摘要

PROBLEM TO BE SOLVED: To thrust an intracranial insertion electrode in the specific region of a brain according to the measuring result of brain activity without releasing a brain surface electrode from the surface of the brain after the brain activity is measured by the brain surface electrode to perform mapping.

SOLUTION: The brain surface electrode has an insulating layer 20 formed of a photosensitive insulating material, the metal layer 40 arranged on the insulating layer 20, and the insulating layer 70 covering a part of the metal layer 40 and formed of the photosensitive insulating material and a through-hole 114 is provided at the brain surface electrode so as to pierce two sides thereof. The metal layer 40 contains an electrode region 111 exposed to the outside and the wiring region 113 covered with the insulating layer 70. The electrode region 111 is a region surrounding the outer periphery of the opening part of the through-hole 114 in an annular form and a gap 115 is present between the electrode region 111 and the edge of the opening part of the through-hole 114. The metal layer 40 is not exposed from the inner wall surface of the through-hole 114.

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