| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the remaining of erasure of electrons when writing/erasure is performed. Ž<P>SOLUTION: The semiconductor device includes a semiconductor substrate 1 on which a first surface 13 and a second surface 14 which forms a step 15 with the first surface 13 are formed on one principal plane. Then, a control gate electrode 3 formed via a gate insulating film 2 is provided on the first surface 13 of the semiconductor substrate 1. Then, a memory gate electrode 9 formed via an oxide film 6, a nitride film 7, and an oxide film 8 capable of holding the electrons or holes adjacent to the control gate electrode 3 is provided on the second surface 14 of the semiconductor substrate 1. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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