| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a MOS type semiconductor integrated circuit device which integrates a MISFET element, a flash memory element, a capacitance element such as a polysilicon capacitor which use silicon nitride films formed in a hot wall type batch vacuum CVD furnace which prevents the generation of a foreign substance caused by the deformation and minute movement of a wafer. Ž<P>SOLUTION: In a CVD film forming process of the silicon nitride film, when a furnace temperature is raised up to a film forming temperature, a step of holding intermediate barometric pressure between barometric pressure upon formation of the film and ordinary pressure is provided. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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