| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for suppressing oxygen permeated into the surface defect of a silicon carbide substrate and restoring the surface defect, when oxidizing the silicon carbide substrate (SiC). Ž<P>SOLUTION: A method of manufacturing a semiconductor device is characterized by having a step of injecting nitrogen into the surface of a silicon carbide substrate 10 and a step of forming a first oxide film (gate oxide film 20) on the surface of the silicon carbide substrate 10 by thermally oxidizing the surface of the silicon carbide substrate 10 injected with nitrogen. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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