| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method with which when a gate electrode is patterned, a silicon substrate by the gate electrode of a selection gate transistor is dug. Ž<P>SOLUTION: The method of manufacturing a semiconductor device includes the steps of: forming an electrode material film 6 on the memory cell portion and the selection gate portion of a semiconductor substrate; forming a first mask material film covering parts of the electrode material film 6 and hard mask material films 7 and 8 corresponding to the cell portion; processing the electrode material film 6 of the selection gate portion using the hard mask material films 7 and 8 of the selection gate portion and the first mask material film as a mask; forming a second mask material film 11 covering parts of the electrode material film 6, hard mask material films 7 and 8, etc., corresponding to the selection gate portion; and processing the electrode material film 6, a block film 5, and a silicon nitride film 4 using the hard mask material films 7 and 8 of the memory cell portion and the second mask material film 11 as a mask. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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