METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device can prevent etching to a base (N+), and form a film at a relatively high film formation rate. Ž<P>SOLUTION: This method for manufacturing of a semiconductor device includes: a first step of carrying a silicon substrate into a processing chamber; a second step of supplying at least a first silane-based gas and a first etching gas into the processing chamber while heating the silicon substrate; and a third step of supplying at least a second silane-based gas and a second etching gas into the processing chamber while heating the silicon substrate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž