发明名称 LIQUID IMMERSION LITHOGRAPHY
摘要 A radiation-sensitive resin composition for liquid immersion lithography which produces an excellent pattern profile, exhibits excellent resolution, provides sufficient focal depth allowance, and elutes only the minimal amount in the liquid when brought in contact with the liquid during exposure to radiation. The radiation-sensitive resin composition forms a photoresist film in liquid immersion lithography, in which radiation is emitted through a liquid for use in liquid immersion lithography having a refractive index larger than 1.44 and smaller than 1.85 at a wavelength of 193 nm, existing between a lens and a photoresist, the composition comprising a resin having a recurring unit with a lactone structure, which is insoluble or scarcely soluble in alkali, but becomes soluble in alkali by the action of an acid, and a radiation-sensitive acid generator.
申请公布号 US2009305161(A1) 申请公布日期 2009.12.10
申请号 US20060094493 申请日期 2006.11.20
申请人 JSR CORPORATION 发明人 NAKAMURA ATSUSHI;WANG YONG;TSUJI TAKAYUKI
分类号 G03F7/004 主分类号 G03F7/004
代理机构 代理人
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