发明名称 |
Through Substrate Via Semiconductor Components |
摘要 |
A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.
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申请公布号 |
US2009302480(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20080135059 |
申请日期 |
2008.06.06 |
申请人 |
BIRNER ALBERT;HOECKELE UWE;KUNSTMANN THOMAS;SEIDEL UWE |
发明人 |
BIRNER ALBERT;HOECKELE UWE;KUNSTMANN THOMAS;SEIDEL UWE |
分类号 |
H01L23/48;H01L21/31 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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