| 摘要 |
A phase change memory device includes a silicon substrate having cell and peripheral regions. A first insulation layer with a plurality of holes is formed in the cell region. Recessed cell switching elements are formed in the holes. Heat sinks are formed in the holes in which the cell switching elements are formed, and the heat sinks project out of the first insulation layer. A gate is formed in the peripheral region and has a stack structure of a gate insulation layer, a first gate conductive layer, a second gate conductive layer, and a hard mask layer. A second insulation layer is formed on the surface of the silicon substrate. The second insulation layer has contact holes exposing the heat sinks. Heaters are formed in the contact holes, and stack patterns of a phase change layer and a top electrode are formed on the heaters.
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