A high-voltage termination structure includes a peripheral voltage-spreading network. One or more trench structures are connected at least partly in series between first and second power supply voltages. The trench structures include first and second current-limiting structures connected in series with a semiconductor material, and also includes permanent charge in a trench-wall dielectric. The current-limiting structures in the trench structures are jointly connected in a series-parallel ladder configuration. The current-limiting structures, in combination with the semiconductor material, provide a voltage distribution between the core portion and the edge portion.
申请公布号
WO2009148695(A2)
申请公布日期
2009.12.10
申请号
WO2009US39612
申请日期
2009.04.06
申请人
MAXPOWER SEMICONDUCTOR INC.;PAUL, AMIT;DARWISH, MOHAMED, N.;ZENG, JUN