| 摘要 |
PROBLEM TO BE SOLVED: To provide a producing method of semiconductor device for actualizing both removal of a stresser film in a pMOS domain and control of withdrawal of the boundary between pMOS domain and nMOS domain toward the nMOS side. SOLUTION: The producing method of semiconductor device includes the steps of (a) forming a stresser 13 at the upper surface of a semiconductor substrate 1, (b) selectively forming a resist film 15 on the nMOS domain of the stresser film 13, (c) removing by the etching process the stresser film 13 in the pMOS domain for the predetermined thickness using a resist film 15 as a mask to separate the stresser film 13 in the nMOS domain from the stresser film 13a in the pMOS domain, (d) covering, with a protecting film 17a, the stresser film 13b exposed from the boundary S between the nMOS domain and the pMOS domain with the etching process, and (e) removing the stresser film 13a remaining in the pMOS domain with the etching process. COPYRIGHT: (C)2010,JPO&INPIT
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