| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor which prevent the contact resistance of such a conductive material as a conductive plug formed in insulating film holes from varying in a substrate surface. SOLUTION: The manufacturing method for the semiconductor device includes a step of forming a first inter-layer insulating film 45 above a silicon substrate 30, a step of forming a ferroelectric capacitor Q above the first inter-layer insulating film 45, a step of forming a laminated film having hydrogen barrier insulating films 55, 57, and 62 and a second inter-layer insulating film 58 above the ferroelectric capacitor Q, a step of forming holes 58b and 58c on the laminated film by etching, and a step of burying metal wiring (conductive material) 69 in the holes 58b and 58c. At the step of forming the holes 58b and 58c, the hydrogen barrier insulating films 55, 57, and 62 are etched by an etching method different from an etching method used to etch the second inter-layer insulating film 58. COPYRIGHT: (C)2010,JPO&INPIT
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