| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of sufficiently reducing source inductance to obtain high efficiency of heat dissipation, even when a thin and deep via hole is provided. SOLUTION: A compound semiconductor region 2 is formed on an SiC substrate 1, after that, a gate electrode 4g, a source electrode 4s, and a drain electrode 4d are formed on the compound semiconductor region 2, and an Au film 10 to be connected to the source electrode 4s is further formed on the compound semiconductor region 2. Next, the backside of the SiC substrate 1 is irradiated with a laser beam to form the via hole 21 which penetrates the SiC substrate 1, the compound semiconductor region 2, and the Au layer. Next, via wiring 14 is formed over the side of the via hole 21 and the backside of the SiC substrate 1. Next, a conduction via is formed by filling molten metal drop 32 in the via hole 21 to be solidified. Then, when the molten metal drop 32 is filled, the SiC substrate 1 is relatively oscillated to the molten metal drop 32. COPYRIGHT: (C)2010,JPO&INPIT |
