| 摘要 |
This invention provides a process for producing an indium oxide-type transparent electroconductive film which is an amorphous film, can easily be patterned by etching with a weak acid, has low resistance and high transmittance, and further can easily be crystallized. The production process comprises the step of, regarding a sputtering target containing indium oxide and an addition element, confirming that an amorphous film can be formed at a predetermined film forming temperature and the amorphous film can be then crystallized by annealing at a predetermined annealing temperature, the step of determining, as a film forming oxygen partial pressure, an oxygen partial pressure which is different from an optimal oxygen partial pressure defined as an oxygen partial pressure capable of providing the lowest resistivity of the amorphous film formed at the predetermined film forming temperature and can provide the lowest resistivity of the film crystallized by annealing at the predetermined annealing temperature, the step of forming an amorphous film by sputtering at the film forming oxygen partial pressure, and the step of annealing the amorphous film at the predetermined annealing temperature for crystallization to form an indium oxide-type transparent electroconductive film.
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