| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of extending retention life not only before rewriting stress application but also after the rewriting stress application without degrading a rewriting speed. SOLUTION: A gate insulation film GI between a semiconductor substrate SUB and a gate electrode layer GE includes a first silicon oxide film OX1, a first silicon nitride film NI1, a second silicon oxide film OX2, a second silicon nitride film NI2, and a third silicon oxide film OX3. The second silicon oxide film OX2 has a thickness not larger than 1 nm. The second silicon nitride film NI2 has a thickness larger than that of the first silicon nitride film NI1. COPYRIGHT: (C)2010,JPO&INPIT
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