COMPOUND SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD

摘要

<P>PROBLEM TO BE SOLVED: To provide semiconductor manufacturing device and method of manufacturing a II-VI group compound semiconductor excellent in crystallinity. Ž<P>SOLUTION: An MOCVD device includes a supply port 12 supplying a material gas toward a substrate 10 at a predetermined angle and an exhaust port 14 disposed at a position upon which the material gas reflected from the substrate 10 is incident. Two or more material gases are incident respectively upon the substrate 10 at predetermined angles to react them with one another on the substrate 10. The material gas reflected from the substrate 10 is directly taken into the exhaust port 14 to be exhausted or the traveling direction of the material gas reflected from the substrate 10 is guided to the exhaust port 14 to be exhausted. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž