| 摘要 |
A semiconductor device having an MTJ device excellent in operating characteristics and a manufacturing method therefor are obtained. The MTJ device is formed of a laminated structure obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower magnetic film and the upper magnetic film contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film of the MTJ device and a hard mask is formed over the CAP layer. The CAP layer contains a simple substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a simple substance of crystalline tantalum (Ta) as a constituent material. The hard mask is so formed that the film thickness thereof is larger than the film thickness of the CAP layer.
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