发明名称 Driver circuit having high reliability and performance and semiconductor memory device including the same
摘要 Example embodiments relate to a driver circuit and a semiconductor memory device including the driver circuit. The driver circuit includes a pull-up unit configured to connect an output node to a first power supply voltage in response to an input signal, an interface unit connected between the output node and a first node to decrease a voltage of the output node in response to a control signal, and a pull-down unit configured to connect the first node to a second power supply voltage. The interface unit includes a first transistor configured to connect the output node with the first node in response to the control signal and a first resistor connected between the output node and the first node. The interface unit may also include a second resistor and a second transistor connected in series between the output node and the first node.
申请公布号 US2009302897(A1) 申请公布日期 2009.12.10
申请号 US20090457240 申请日期 2009.06.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JIN-YOUNG;SONG KI-WHAN
分类号 H03K3/00 主分类号 H03K3/00
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