发明名称 |
Driver circuit having high reliability and performance and semiconductor memory device including the same |
摘要 |
Example embodiments relate to a driver circuit and a semiconductor memory device including the driver circuit. The driver circuit includes a pull-up unit configured to connect an output node to a first power supply voltage in response to an input signal, an interface unit connected between the output node and a first node to decrease a voltage of the output node in response to a control signal, and a pull-down unit configured to connect the first node to a second power supply voltage. The interface unit includes a first transistor configured to connect the output node with the first node in response to the control signal and a first resistor connected between the output node and the first node. The interface unit may also include a second resistor and a second transistor connected in series between the output node and the first node.
|
申请公布号 |
US2009302897(A1) |
申请公布日期 |
2009.12.10 |
申请号 |
US20090457240 |
申请日期 |
2009.06.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JIN-YOUNG;SONG KI-WHAN |
分类号 |
H03K3/00 |
主分类号 |
H03K3/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|