| 摘要 |
A semiconductor device includes: a first interlayer insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the first interlayer insulating film; and a via and a dummy via, which are formed in the first interlayer insulating film so as to connect to at least one of the plurality of interconnects. A void is selectively formed between adjacent ones of the interconnects in the first interlayer insulating film. The dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect. The via and the dummy via are surrounded by the first interlayer insulating film with no void interposed therebetween.
|
