发明名称 |
Method for passivating crystal silicon surfaces |
摘要 |
In a method of making a c-Si-based cell or a muc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.
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申请公布号 |
US7629236(B2) |
申请公布日期 |
2009.12.08 |
申请号 |
US20070574167 |
申请日期 |
2007.02.23 |
申请人 |
ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
WANG QI;WANG TIHU;PAGE MATTHEW R.;YAN YANFA |
分类号 |
H01L21/36;H01L21/20 |
主分类号 |
H01L21/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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