| 摘要 |
<p>PURPOSE: A non-volatile semiconductor storage device and a method for manufacturing same are provided to control the charge holding characteristic by selectively oxidizing the charge storage layer film. CONSTITUTION: A plurality of laminated units are arranged to a first direction which is parallel in the major surface of the respective substrate. A gate electrode(70) is arranged to the major surface in the second direction which is not parallel to the first direction. The plurality of laminated units include a plurality of laminate semiconductor layers(50) respectively. A spacing between the adjacent laminated units includes the first spacing and the second spacing bigger than the first spacing. The second spacing is provided to the periodic interval of the quadruple of the half pitch(F) of the bit line. The gate electrode includes the protrusion entering the gap of the second spacing between the laminated units. The first insulating layer, the charge storage layer and the second insulating layer are provided between the side of the semiconductor layer and the protrusion.</p> |
