METHOD FOR FORMING METAL FILM USING CARBONYL MATERIAL, METHOD FOR FORMING MULTILAYERED WIRING STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND FILM FORMING APPARATUS

摘要

This invention provides a film forming method characterized by comprising a first step of supplying a carbonyl material of a metallic element in the form of a gas phase molecule, together with a gas phase component capable of suppressing the decomposition of the gas phase molecule, onto the surface of an object substrate in such a state that the partial pressure of the gas phase component is set to a first partial pressure at which the decomposition of the carbonyl gas phase material molecules can be suppressed, and a second step of changing the partial pressure of the gas phase component on the surface of the object substrate to a second partial pressure which causes the decomposition of the carbonyl material to deposit the metallic element onto the surface of the object substrate.