发明名称 Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
摘要 Measurement of a profile of a scatterometry object on top of one or more product layers on a substrate is disclosed. To prevent an unknown parameters of one or more product layers having an effect on the measurement of the object profile, the thickness of the one or more product layers is measured prior to measuring the profile of the scatterometry object on the layer(s). In an embodiment, each of a plurality of product layers is measured as it is exposed so that only the degree of freedom of the most recently exposed product layer is unknown at each measurement step. When each of a plurality of product layers has been measured, and a scatterometry object is placed at the top of the layers, only the degrees of freedom of that scatterometry object should be unknown and only the profile of the object should need to be measured.
申请公布号 US7630087(B2) 申请公布日期 2009.12.08
申请号 US20060603257 申请日期 2006.11.22
申请人 ASML NETHERLANDS B.V. 发明人 VERSTAPPEN LEONARDUS HENRICUS MARIE;KIERS ANTOINE GASTON MARIE;NAUMOSKI GOCE
分类号 G01B11/24 主分类号 G01B11/24
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