发明名称 |
Thin film transistor having double-layered gate electrode and method of manufacturing the thin film transistor |
摘要 |
A thin film transistor (TFT) that can prevent damage to a silicon layer under a gate electrode in an annealing process by using a first gate electrode having high thermal resistance and a second gate electrode having high reflectance and a method of manufacturing the TFT are provided. The method of manufacturing a TFT includes forming a double-layered gate electrode which includes a first gate electrode formed of a material having high thermal resistance and a second gate electrode formed of a metal having high optical reflectance on the first gate electrode, and forming a source and a drain by annealing doped regions on both sides of a silicon layer under the gate electrode by radiating a laser beam onto the entire upper surface of the silicon layer.
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申请公布号 |
US7629205(B2) |
申请公布日期 |
2009.12.08 |
申请号 |
US20060330344 |
申请日期 |
2006.01.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO HANS S.;LIM HYUCK;NOGUCHI TAKASHI;KWON JANG-YEON |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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