发明名称 |
Plasma processing method for forming a silicon nitride film on a silicon oxide film |
摘要 |
A plasma processing method for forming a silicon nitride film on a silicon oxide film, the method including preparing a substrate on which the silicon oxide film is formed; generating plasma by supplying a nitrogen gas onto the silicon oxide film; and nitride-processing the silicon oxide film by the plasma so as to modify an upper portion of the silicon oxide film into the silicon nitride film.
|
申请公布号 |
US7629033(B2) |
申请公布日期 |
2009.12.08 |
申请号 |
US20070785356 |
申请日期 |
2007.04.17 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HONGO TOSHIAKI;OSAWA TETSU |
分类号 |
B01J19/08;H05H1/24;C23C8/24;C23C16/44;C23C16/455;C23C16/511;H01J37/32;H01L21/20;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
B01J19/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|