| 摘要 |
A method of manufacturing a bottom gate thin film transistor ("TFT") in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region.
|
