发明名称 |
Structure and method for hybrid tungsten copper metal contact |
摘要 |
The present invention in one embodiment provides a method of forming an interconnect comprising, providing a interlevel dielectric layer atop a substrate, the interlevel dielectric layer including at least one tungsten (W) stud extending from an upper surface of the interlevel dielectric to the substrate; recessing an upper surface of the at least one tungsten (W) stud below the upper surface of the interlevel dielectric to provide at least one recessed tungsten (W) stud; forming a first low-k dielectric layer atop the upper surface of the interlevel dielectric layer and the at least one recessed tungsten (W) stud; forming a opening through the first low-k dielectric layer to expose an upper surface of the at least one recessed tungsten stud; and filling the opening with copper (Cu).
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申请公布号 |
US7629264(B2) |
申请公布日期 |
2009.12.08 |
申请号 |
US20080099996 |
申请日期 |
2008.04.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BONILLA GRISELDA;KUMAR KAUSHIK A.;CLEVENGER LAWRENCE A.;GRUNOW STEPHAN;PETRARCA KEVIN S.;QUON ROGER A. |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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