发明名称 Multiple-time flash anneal process
摘要 A method of forming an integrated circuit is provided. The method includes performing a multiple-time flash anneal process to a wafer, wherein the multiple-time flash anneal process comprises preheating the wafer to a first preheat temperature; performing a first flash on the wafer with a first flash energy; preheating the wafer to a second preheat temperature; and performing a second flash on the wafer with a second flash energy.
申请公布号 US7629275(B2) 申请公布日期 2009.12.08
申请号 US20070698239 申请日期 2007.01.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN JENNIFER;CHEN CHI-CHUN;TAO HUN-JAN
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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