| 摘要 |
<p>PURPOSE: A highly compact vertical flash memory cell string, a cell device and a method for manufacturing the same are provided to simplify a process of etching a circular through-hole formed with the cell string, by arranging a sacrificial semiconductor layer with relatively high etching rate among semiconductor layers of control electrodes. CONSTITUTION: Cell devices are sequentially connected with each other. A switching device is arranged at the end of the connected cell devices. Control electrodes(4,5,6) comprise a first through-hole passing through a top surface and a bottom surface. A second through-hole passes through the top surface and the bottom surface. An isolation insulation film is formed on the top surface and the bottom surface of the control electrode. A gate stack comprises a blocking insulation film(10), a charge storage node(11) and a tunneling insulation film(12). A body(13) is formed on the inner surface of the gate stack.</p> |
