发明名称 |
Nitride-based semiconductor device and method of fabricating the same |
摘要 |
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.
|
申请公布号 |
US7629623(B2) |
申请公布日期 |
2009.12.08 |
申请号 |
US20080139807 |
申请日期 |
2008.06.16 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
TODA TADAO;YAMAGUCHI TSUTOMU;HATA MASAYUKI;NOMURA YASUHIKO |
分类号 |
H01L27/15;H01L21/285;H01L29/40;H01L33/00;H01L33/32;H01L33/40;H01S5/343 |
主分类号 |
H01L27/15 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|