NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

摘要

PURPOSE: A non-volatile memory device using a resistor is provided to compensate a resistance difference on a word line by controlling the level of a global column selection signal as well as a local column selection signal. CONSTITUTION: A memory cell array(10) comprises a matrix of non-volatile memory cells. Each bit line is coupled with a row of the non-volatile memory cells within the memory cell array. Each column selection switch(SEL0~SELn) is coupled with each bit line. The column selection switch selects one or more bit line of the bit lines in response to a column selection signal. Two or more column selection signals of the column selection signals applied to the column selection switches have different levels. The column selection switches are classified into column selection switch groups. Each column selection switch group comprises one or more column selection switches.