| 摘要 |
<p>PURPOSE: A method for forming a fine pattern of a semiconductor device using a spacer is provided to simplify a hard mask for forming the fine pattern, by forming a conformal BARC(Bottom Anti-Reflective Coating) spacer using the characteristics of conformal BARC coated along the bending of the surface where patterns are formed. CONSTITUTION: A hard mask layer is formed on an etching object film(210) formed on a semiconductor substrate. A photoresist pattern(260) is formed on the hard mask. A first BARC(Bottom Anti-Reflective Coating) layer(250) is formed along the surface of the result where the photoresist pattern is formed. A spacer(270) is formed on the sidewall of the photoresist pattern by etching the first BARC layer. The photoresist pattern is removed. The hard mask layer is patterned using the spacer as a mask.</p> |
