MEMORY DEVICE AND DATA STORAGE DEVICE INCLUDING THE SAME

摘要

PURPOSE: A memory device and a data storing apparatus including the same are provided to simplify the memory device manufacturing process and to reduce process cost thereof, by implementing the memory device using two magnetic memory devices formed with a magnetic junction structure including at least one magnetic layer. CONSTITUTION: A data storage region(B) and a peripheral circuit region(A) are defined in a semiconductor substrate(10). A first magnetic memory device(110) is formed in the peripheral circuit region of the semiconductor substrate, and exchanges data with the outside. A second magnetic memory device(120) is formed in the data storage region of the semiconductor substrate, and exchanges data with the first magnetic memory device. A part of the first magnetic memory device and a part of the second magnetic memory device include at least one magnetic layer respectively. A bit line(BL) transmits and receives a data signal. A first magnetic tunnel junction structure(70) is formed to be connected to the bit line, and receives and transmits the data signal.