| 摘要 |
<p>PURPOSE: An align key of a semiconductor device and a method for forming the same are provided to prevent impurity from being left in the side lamp of a step portion, by forming the step portion with minimum depth when the align key is formed in a scribe lane region. CONSTITUTION: A first insulation layer(104) is formed on a semiconductor substrate(102) in a scribe lane region. An etch mask pattern is formed on the first insulation layer. An etch stopping layer(110) and a second insulation layer(112) are formed to maintain a step due to the etch mask pattern on the first insulation layer and the etch mask pattern. A conductive layer is formed in a space between the etch mask pattern. A conductive layer pattern(120b) lower than the second insulation layer is formed by performing a planarization process on the surface of the conductive layer.</p> |
